ZnO/Ge Core-Shell Nanowires and Ge Nanotubes Fabricated by Chemical Vapor Deposition and Wet Etching
ZnO/Ge Core-Shell Nanowires and Ge Nanotubes Fabricated by Chemical Vapor Deposition and Wet Etching
复制标题
化学气相沉积和湿法刻蚀制备ZnO/Ge核壳纳米线和Ge纳米管
DOI：
10.1088/1361-6528/ac6bac
复制
发表时间：
2022
期刊：
影响因子：
3.5
通讯作者：
Naoki Fukata
中科院分区：
文献类型：
--
作者：
Yong-Lie Sun;Xiang-Dong Zheng;Wipakorn Jevasuwan;Naoki Fukata
高比表面积的核壳纳米线和纳米管等一维锗相关纳米结构在储能和电子器件中表现出优异的性能，其结构控制对进一步提高锗相关纳米结构的性能和稳定性具有重要意义。在这项工作中，我们制作了不同壳厚的垂直形成的ZnO/Ge核壳纳米线。研究了纳米线的形貌、结晶度和内应力与壳生长时间和温度的关系。将湿法刻蚀法应用于ZnO/Ge核壳异质结纳米线中，证明了去除ZnO核后Ge纳米管的制备和应力松弛。
One-dimensional germanium (Ge)-related nanostructures including core–shell nanowires and nanotubes with high specific surface area show enhanced performance in energy storage and electronic devices, and their structural control is important for further improving their performance and stability. In this work, we fabricated vertically formed ZnO/Ge core–shell nanowires with different shell thicknesses. The dependence of morphology, crystallinity, and internal stress of the nanowires on the shell growth time and temperature was investigated. By applying the wet-etching method to the ZnO/Ge core–shell heterojunction nanowires, we demonstrated the Ge nanotube fabrication and stress relaxation in Ge after ZnO core removal.