Magnetic and Structural Properties of Fully Epitaxial ${\hbox {Fe}}_{3}{\hbox {O}}_{4}/{\hbox {MgO/GaAs}}(100)$ for Spin Injection
Magnetic and Structural Properties of Fully Epitaxial ${\hbox {Fe}}_{3}{\hbox {O}}_{4}/{\hbox {MgO/GaAs}}(100)$ for Spin Injection
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DOI：
10.1109/tmag.2008.2001588
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发表时间：
2008-11
影响因子：
2.1
通讯作者：
P. Wong;Wen Zhang;Yongbing Xu;S. Hassan;S. Thompson
中科院分区：
文献类型：
--
作者：
P. Wong;Wen Zhang;Yongbing Xu;S. Hassan;S. Thompson
本文采用分子束外延和生长后退火相结合的方法，研究了在GaAs（100）表面插入外延MgO层对Fe3O4超薄膜结构和磁性能的影响。MgO薄膜以立方体对立方体取向生长到GaAs。由于磁层的晶格松弛，外延Fe3O4晶格电池相对于MgO和GaAs晶格电池旋转了45度。所有样品都表现出强烈的四倍立方磁各向异性，沿砷化镓的lang001rang方向具有易轴性。观察到MgO势垒存在时，单轴各向异性常数显著降低。Fe3O4/GaAs杂化结构中单轴磁各向异性的存在归因于磁铁矿膜与GaAs的界面接触。
In this paper, the authors report on the investigation on the effect of inserting an epitaxial MgO layer on the structural and magnetic properties of Fe3O4 ultrathin films grown on GaAs(100) by combined techniques of molecular beam epitaxy and postgrowth annealing in an oxygen atmosphere. The MgO films were grown with a cube-on-cube orientation to GaAs. The epitaxial Fe3O4 lattice cell was rotated by 45deg in respect to that of MgO and GaAs due to the lattice relaxation of the magnetic layer. All samples studied exhibited strong fourfold cubic magnetic anisotropy with easy axes along the lang001rang directions of GaAs. A dramatic decrease in the uniaxial anisotropy constant in the presence of the MgO barrier was observed. The existence of the uniaxial magnetic anisotropy in the Fe3O4/GaAs hybrid structure has been attributed to the interfacial contact between the magnetite film and the GaAs.