High Electromagnetic Wave Absorption Performance of Silicon Carbide Nanowires in the Gigahertz Range

High Electromagnetic Wave Absorption Performance of Silicon Carbide Nanowires in the Gigahertz Range
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DOI:
10.1021/jp905127t
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发表时间:
2010-02-04
影响因子:
3.7
通讯作者:
Li, Yuan-Yao
Li, Yuan-Yao
中科院分区:
化学3区
文献类型:
--
作者:
Chiu, Sheng-Cheng;Yu, Hsin-Chih;Li, Yuan-Yao

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利用自由空间天线系统研究了2 mm厚碳化硅纳米线(SiCNW)-环氧复合材料在2-40 GHz范围内的电磁波吸收特性。35 wt % SiCNW复合材料在8.3 GHz和27 GHz频段的双频电磁波吸收率分别为-31.7和-9.8 dB。在31.1 GHz时,含25% SiCNW的复合材料的反射损耗最小,为-32.4 dB。对电磁波吸收损耗机理的研究表明,树脂基体中网状SiCNWs引起的电导损耗与SiCNWs与环氧树脂界面的弛豫极化损耗共同作用。
The electromagnetic (EM) wave absorption properties of 2-mm-thick silicon carbide nanowire (SiCNW)-epoxy composites were studied in the range of 2-40 GHz using a free-space antenna-based system. The 35 wt % SiCNW composites exhibited dual-frequency EM wave absorptions of -31.7 and -9.8 dB at 8.3 and 27 GHz, respectively. The minimum reflection loss of -32.4 dB was achieved at 31.1 GHz for the composites containing 25 wt % SiCNW. A study of the loss mechanism of EM wave absorption suggests the combination of the electric conductance loss caused by network-like SiCNWs in the resin matrix and the relaxation polarization loss in the interfaces of SiCNWs and the epoxy resin.