Advanced Thermoluminescence Spectroscopy as a Research Tool for Semiconductor and Photonic Materials: A Review and Perspective
Advanced Thermoluminescence Spectroscopy as a Research Tool for Semiconductor and Photonic Materials: A Review and Perspective
复制标题
先进热释光光谱作为半导体和光子材料的研究工具：回顾与展望
DOI：
10.1002/pssa.202200712
复制
发表时间：
2023
期刊：
影响因子：
--
通讯作者：
Selim, Farida A.
中科院分区：
文献类型：
--
作者：
Selim, Farida A.
热释光（TL）或热释光（TSL）光谱是基于通过提供足够的热能来克服陷阱的势垒，从而从带隙中的陷阱中释放电荷载流子。它提供了一个强有力的工具来测量带隙中的局域态/陷阱的位置。尽管如此，它在半导体中的应用非常有限。在这里，TL光谱学的基础知识和技术的最新进展，重点是低温热激光电子能谱（C-TSPS），它扩展TL测量到低温制度，并允许检测非常低浓度的浅和深局域态进行了讨论。本文的一个目标是向读者介绍TL和C-TSPS在半导体表征中的使用，解释它如何应用，并展示其作为测量半导体中浅施主/受主电离能的强大工具以及作为表征补偿缺陷的方法的优势。文章还讨论了C-TSPS在新研究领域的潜在应用，如金属表面的腐蚀和氧化层的形成。
Thermoluminescence (TL) or thermally stimulated luminescence (TSL) spectroscopy is based on liberating charge carriers from traps in the bandgap by providing enough thermal energy to overcome the potential barrier of the traps. It provides a powerful tool to measure the positions of the localized states/traps in the bandgap. Despite that, its applications in semiconductors are very limited. Herein, the basics of TL spectroscopy and the recent advances in the technique with focus on cryogenic thermally stimulated photoemission spectroscopy (C‐TSPS) which extends TL measurements to cryogenic regime and allows the detection of very low concentrations of shallow and deep localized states is discussed. One goal herein is to introduce the reader to the use of TL and C‐TSPS in the characterization of semiconductors, explaining how it can be applied and demonstrating its advantages as a powerful tool for measuring shallow donor/acceptor ionization energies in semiconductors and as a method for characterizing compensating defects. The article also discusses interesting potential applications of C‐TSPS in new research areas such as corrosion and formation of oxide layers on metal surfaces.
影响因子：
2.3
作者：
通讯作者：
--
DOI：
--
发表时间：
2016
期刊：
影响因子：
--
作者：
J. Thirumalai
通讯作者：
J. Thirumalai