Integration of boron arsenide cooling substrates into gallium nitride devices
Integration of boron arsenide cooling substrates into gallium nitride devices
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DOI：
10.1038/s41928-021-00595-9
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发表时间：
2021-06-17
影响因子：
34.3
通讯作者：
Hu, Yongjie
中科院分区：
文献类型：
--
作者：
Kang, Joon Sang;Li, Man;Hu, Yongjie
热管理在现代电子系统中是至关重要的。改善散热的努力导致了具有高导热性的新型半导体材料的探索，包括砷化硼（BAs）和磷化硼（BP）。然而，将这些材料集成到器件中以及测量它们的界面能量输运仍未被探索。在这里，我们证明了BAs和BP冷却衬底可以与金属、宽带隙半导体（氮化镓，GaN）和高电子迁移率晶体管器件异质集成。GaN-on-BAs结构显示出250 MW m(-2) K-1的高热边界电导，并且与长度相关缩放（从100 μ m到100 nm）的器件级热点温度的比较表明，BAs的功率冷却性能超过了报道的金刚石器件。此外，在相同晶体管功率密度下，使用BAs冷却衬底的AlGaN/GaN高电子迁移率晶体管的热点温度明显低于金刚石和碳化硅，这说明了它们在射频电子热管理方面的潜力。我们将ba和BP的高热管理性能归因于它们独特的声子带结构和界面匹配。砷化硼和磷化硼冷却衬底可以与其他材料集成，包括宽带隙半导体氮化镓，创造出具有高热边界电导的结构和具有低热点温度的高电子迁移率晶体管。
Thermal management is critical in modern electronic systems. Efforts to improve heat dissipation have led to the exploration of novel semiconductor materials with high thermal conductivity, including boron arsenide (BAs) and boron phosphide (BP). However, the integration of such materials into devices and the measurement of their interface energy transport remain unexplored. Here, we show that BAs and BP cooling substrates can be heterogeneously integrated with metals, a wide-bandgap semiconductor (gallium nitride, GaN) and high-electron-mobility transistor devices. GaN-on-BAs structures exhibit a high thermal boundary conductance of 250 MW m(-2) K-1, and comparison of device-level hot-spot temperatures with length-dependent scaling (from 100 mu m to 100 nm) shows that the power cooling performance of BAs exceeds that of reported diamond devices. Furthermore, operating AlGaN/GaN high-electron-mobility transistors with BAs cooling substrates exhibit substantially lower hot-spot temperatures than diamond and silicon carbide at the same transistor power density, illustrating their potential for use in the thermal management of radiofrequency electronics. We attribute the high thermal management performance of BAs and BP to their unique phonon band structures and interface matching.Boron arsenide and boron phosphide cooling substrates can be integrated with other materials, including the wide-bandgap semiconductor gallium nitride, creating structures that exhibit high thermal boundary conductances and high-electron-mobility transistors that exhibit low hot-spot temperatures.