The impact on the magnetic field growth of half-metallic Fe3O4 thin films
The impact on the magnetic field growth of half-metallic Fe3O4 thin films
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DOI：
10.1016/j.jssc.2006.04.007
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发表时间：
2006-06
影响因子：
3.3
通讯作者：
Xiaoli Tang;Huaiwu Zhang;Hua Su;Z. Zhong;Y. Jing
中科院分区：
文献类型：
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作者：
Xiaoli Tang;Huaiwu Zhang;Hua Su;Z. Zhong;Y. Jing
采用直流磁控反应溅射法在Si（100）衬底上制备了具有钽（Ta）缓冲层的半金属化Fe3 O4薄膜。重点研究了Fe {sub 3} O {sub 4}薄膜的磁场生长.实验结果表明，在生长过程中外加磁场能有效地促进Fe {sub 3} O {sub 4}多晶沿沿着生长。磁电阻（MR）也进行了测试，并与没有外部磁场制备的样品进行比较，并表明施加外部磁场可以提高MR值。- 图形摘要：多晶Fe {sub 3} O {sub 4}薄膜生长的XRD图案（a）没有和（B）与外部磁场。
Half-metallic Fe{sub 3}O{sub 4} films grown on a Si (100) substrate with a tantalum (Ta) buffer layer were prepared by DC magnetron reactive sputtering. Primary emphasis was placed on magnetic field growth of Fe{sub 3}O{sub 4} thin film. The experiment's results showed that applying an external magnetic field to the samples during the growth was efficient to promote the polycrystalline Fe{sub 3}O{sub 4} growth along certain directions. The magnetoresistance (MR) was also tested for comparison of the samples prepared with and without an external magnetic field, and showed that applying an external magnetic field can promote the MR values. - Graphical Abstract: XRD patterns of polycrystalline Fe{sub 3}O{sub 4} films growth (a) without and (b) with an external magnetic field.