InGaAs metal-semiconductor-metal photodetectors with a hybrid combination of transparent and opaque electrodes
InGaAs metal-semiconductor-metal photodetectors with a hybrid combination of transparent and opaque electrodes
复制标题
具有透明和不透明电极混合组合的 InGaAs 金属-半导体-金属光电探测器
DOI：
10.1063/1.118738
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发表时间：
1997
影响因子：
4
通讯作者：
I. Adesida
中科院分区：
文献类型：
--
作者：
W. Wohlmuth;M. Arafa;P. Fay;I. Adesida
提出并演示了一种采用透明氧化镉锡和不透明钛金电极混合组合的金属-半导体-金属光电探测器（MSMPD）。通过独立设计阳极和阴极处的肖特基势垒高度，可以显着降低暗电流。此外，透明电极的使用使更多的光能够耦合到前侧照明 MSMPD 中，从而提高响应度。对于施加 5 V 的偏压，这些器件表现出 21.2fA/μm2 的极低暗电流密度和对垂直入射的 1.31 μm 波长光的 0.56 A/W 的高响应度。
A metal-semiconductor-metal photodetector (MSMPD) with a hybrid combination of transparent cadmium-tin-oxide and opaque Ti:Au electrodes is proposed and demonstrated. A significant decrease in dark current is obtained by independently engineering the Schottky barrier heights at the anode and cathode. In addition, the use of transparent electrodes enables more light to be coupled into the front-side illuminated MSMPDs thereby increasing the responsivity. For an applied bias of 5 V, these devices exhibited an extremely low dark current density of 21.2 fA/μm2 and a high responsivity of 0.56 A/W to perpendicularly incident 1.31 μm wavelength light.