Direct observations of Ge2Sb2Te5 recording marks in the phase-change disk
Direct observations of Ge2Sb2Te5 recording marks in the phase-change disk
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DOI：
10.1063/1.3373419
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发表时间：
2010-05
影响因子：
3.2
通讯作者：
M. Naito;M. Ishimaru;Y. Hirotsu;R. Kojima;N. Yamada
中科院分区：
文献类型：
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作者：
M. Naito;M. Ishimaru;Y. Hirotsu;R. Kojima;N. Yamada
用透射电子显微镜（TEM）研究了真实的相变盘中Ge_2Sb_2Te_5薄膜的原子结构。沉积的非晶Ge_2Sb_2Te_5薄膜被激光照射初始化（结晶）和记录。横截面TEM观察显示，记录标记被完全非晶化的激光照射。在纳米束电子衍射图和原子对分布函数的强度分布中观察到沉积态和激光辐照诱导的非晶Ge2Sb2Te5之间的微小差异。这种差异归因于非晶Ge_2Sb_2Te_5的结构弛豫，这引起了化学顺序的改变。
Atomistic structures of the Ge2Sb2Te5 thin film in the real phase-change disk have been investigated using transmission electron microscopy (TEM). As-deposited amorphous Ge2Sb2Te5 films were laser-irradiated for initialization (crystallization) and recording. Cross-sectional TEM observations revealed that the recording mark was fully amorphized by laser irradiation. A slight difference between the as-deposited and the laser irradiation-induced amorphous Ge2Sb2Te5 was observed in the intensity profile of nanobeam electron diffraction patterns and atomic pair distribution functions. This difference was attributed to structural relaxation of amorphous Ge2Sb2Te5, which gives rise to the alteration of chemical order.