The critical role of boron doping in the thermoelectric and mechanical properties of nanostructured α-MgAgSb

The critical role of boron doping in the thermoelectric and mechanical properties of nanostructured α-MgAgSb
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硼掺杂对纳米结构α-MgAgSb 热电和机械性能的关键作用

DOI:
10.1039/c8tc03646b
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发表时间:
2018-09-28
影响因子:
6.4
通讯作者:
Liu, Zihang
Liu, Zihang
中科院分区:
材料科学2区
文献类型:
--
作者:
Gao, Weihong;Yi, Xiaoyang;Liu, Zihang

文献摘要

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Alpha-Mgagsb化合物吸引了密集的关注,作为替代传统双合金收集的有前途的候选人。先前的研究集中于如何增强热电性能,而对机械性能方面几乎没有兴趣。本文中,我们强调了硼掺杂在SB位点上的关键作用在纳米结构α-MGAGSB的热电和机械性能中,这显着提高了机械性能而不会导致热电性能的恶化。硼掺杂以增强热电性能的无效性在于引入对价带的扰动,与MG位点上的掺杂相比,载流子迁移率和功率因数较低。由于硼掺杂的显着溶液加强,相应的维克斯微度值已大大增加,这可以与机械强大的p型填充石skutterudite相提并论。我们的结果不仅强调了基于Alpha-Mgagsb的发电材料的前景,而且还提供了一种新的,可增强热电材料的新方法。
The α-MgAgSb compound has attracted intensive attention as a promising candidate for the replacement of the traditional BiSbTe alloy for energy harvesting. Previous investigations have focused on how to enhance the thermoelectric performance while little interest has been placed on the aspect of mechanical properties. Herein, we highlighted the critical role of boron doping on the Sb site in the thermoelectric and mechanical properties of nanostructured α-MgAgSb, which significantly increased the mechanical properties without the deterioration of thermoelectric performance. The ineffectiveness of boron doping to enhance thermoelectric performance lied in the introduced perturbation to the valence band, resulting in a lower carrier mobility and power factor in comparison with that of doping on the Mg site. Due to the significant solution strengthening by boron doping, the corresponding Vickers microhardness values have been largely increased, which can be comparable to those of the mechanically robust p-type filled skutterudite. Our results not only highlight the promising prospect of α-MgAgSb-based materials for power generation but also provide a new and facile way to strengthen thermoelectric materials.