Alloyed semiconductor quantum dots: Tuning the optical properties without changing the particle size

Alloyed semiconductor quantum dots: Tuning the optical properties without changing the particle size
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DOI:
10.1021/ja035000o
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发表时间:
2003-06-11
影响因子:
15
通讯作者:
Nie, SM
Nie, SM
中科院分区:
化学1区
文献类型:
--
作者:
Bailey, RE;Nie, SM

文献摘要

被引文献

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制备了具有均匀和梯度内部结构的合金半导体量子点(碲化镉硒),以在不改变颗粒尺寸的情况下实现光学性能的连续调节。我们的结果表明,成分和内部结构是两个重要参数,可用于调节多组分合金量子点的光学和电子性能。一个令人惊讶的发现是成分与吸收/发射能量之间的非线性关系,导致了母体二元系统无法获得的新特性。这种新型合金量子点的红移光发射高达 850 nm,量子产率高达 60%,为带隙工程和开发用于体内分子成像和生物标志物检测的近红外荧光探针开辟了新的可能性。
Alloyed semiconductor quantum dots (cadmium selenium telluride) with both homogeneous and gradient internal structures have been prepared to achieve continuous tuning of the optical properties without changing the particle size. Our results demonstrate that composition and internal structure are two important parameters that can be used to tune the optical and electronic properties of multicomponent, alloyed quantum dots. A surprising finding is a nonlinear relationship between the composition and the absorption/emission energies, leading to new properties not obtainable from the parent binary systems. With red-shifted light emission up to 850 nm and quantum yields up to 60%, this new class of alloyed quantum dots opens new possibilities in band gap engineering and in developing near-infrared fluorescent probes for in vivo molecular imaging and biomarker detection.