Nonradiative exciton decay dynamics in hole-doped single-walled carbon nanotubes
Nonradiative exciton decay dynamics in hole-doped single-walled carbon nanotubes
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DOI：
10.1103/physrevb.81.033409
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发表时间：
2010-01-01
影响因子：
3.7
通讯作者：
Kanemitsu, Yoshihiko
中科院分区：
文献类型：
--
作者：
Matsuda, Kazunari;Miyauchi, Yuhei;Kanemitsu, Yoshihiko
研究了空穴掺杂单壁碳纳米管(SWNTs)中的激子动力学。随着空穴掺杂剂四氟四氰基对奎诺二甲烷(F(4)TCNQ)的加入，光致发光峰强度降低，发光寿命变短。我们发现，在室温下，当密度接近0.1个空穴/nm时，由F(4)TCNQ引起的激子的非辐射衰变约为几十皮秒量级。我们的结果表明，空穴掺杂单壁碳纳米管中的非辐射激子弛豫可以用声子辅助的间接电离过程来解释。
We studied exciton dynamics in hole-doped single-walled carbon nanotubes (SWNTs). The intensities of photoluminescence (PL) peaks decreased and the PL lifetimes became shorter with an addition of hole dopant tetrafluorotetracyano-p-quinodimethane (F(4)TCNQ). We found that the nonradiative decay of excitons induced by the F(4)TCNQ was of the order of a few tens of picoseconds for densities of similar to 0.1 hole/nm at room temperature. Our results suggest that the nonradiative exciton relaxation in the hole-doped SWNTs can be explained by phonon-assisted indirect ionization processes.