Multisite microLED optrode array for neural interfacing.
Multisite microLED optrode array for neural interfacing.
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DOI：
10.1117/1.nph.6.3.035010
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发表时间：
2019-07-01
期刊：
影响因子：
5.3
通讯作者：
Mathieson, Keith
中科院分区：
文献类型：
--
作者：
McAlinden, Niall;Cheng, Yunzhou;Mathieson, Keith
我们提出了一种电可寻址的光极阵列，能够将光传递到大脑中的181个位点，每个位点都提供足够的光来光遗传学地激发体内数千个神经元，其目的是允许在大型哺乳动物中进行行为研究。该装置是一个玻璃微针阵列，直接集成了一个定制的微型led器件，可将光传递到100个针尖和81个间隙表面位置，在体内对神经元进行两级光遗传激发。光传输和热性能进行了评估，该设备每个针位的峰值辐照度为80mw / mm2。该器件由181个80 μ m * 80 μ m2的微型led阵列组成，制作在150 μ m厚的GaN-on-sapphire晶圆上，与150 μ m厚背板上的玻璃针阵列耦合。在微led阵列的蓝宝石侧图案上有针孔层，以减少杂散光。未来的设计将通过光学和热建模进行探索，并对当前设备进行基准测试。
We present an electrically addressable optrode array capable of delivering light to 181 sites in the brain, each providing sufficient light to optogenetically excite thousands of neurons in vivo, developed with the aim to allow behavioral studies in large mammals. The device is a glass microneedle array directly integrated with a custom fabricated microLED device, which delivers light to 100 needle tips and 81 interstitial surface sites, giving two-level optogenetic excitation of neurons in vivo. Light delivery and thermal properties are evaluated, with the device capable of peak irradiances > 80 mW / mm 2 per needle site. The device consists of an array of 181 80 mu m * 80 mu m 2 microLEDs, fabricated on a 150 - mu m -thick GaN-on-sapphire wafer, coupled to a glass needle array on a 150 - mu m thick backplane. A pinhole layer is patterned on the sapphire side of the microLED array to reduce stray light. Future designs are explored through optical and thermal modeling and benchmarked against the current device.