Evaluation of bulk-interface contributions to Edelstein magnetoresistance at metal/oxide interfaces
Evaluation of bulk-interface contributions to Edelstein magnetoresistance at metal/oxide interfaces
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DOI：
10.1103/physrevb.96.140409
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发表时间：
2017-10-19
影响因子：
3.7
通讯作者：
Otani, YoshiChika
中科院分区：
文献类型：
--
作者：
Kim, Junyeon;Chen, Yan-Ting;Otani, YoshiChika
系统研究了在Cu/Bi 2 O3界面存在强自旋轨道相互作用的Co25 Fe 75/Cu/Bi 2 O3异质结中的埃德尔斯坦磁电阻效应.我们成功地观察到一个显着的依赖性的埃德尔斯坦MR的铜层的厚度和温度，也开发了一个通用的分析模型，考虑不同的体和界面的贡献自旋弛豫。我们的分析，基于上述模型，定量地说明了Rashba接口附近的自旋输运的一个独特的属性，揭示了一个突出的作用的自旋弛豫过程，通过确定的比例的自旋弛豫内部和外部的接口。我们进一步发现特征自旋输运不受温度的影响。我们的结果为探索具有自旋动量锁定二维态的系统中的输运提供了重要工具。
We report a systematic study on Edelstein magnetoresistance (Edelstein MR) in Co25Fe75/Cu/Bi2O3 heterostructures with a strong spin-orbit interaction at the Cu/Bi2O3 interface. We succeed in observing a significant dependence of the Edelstein MR on both Cu layer thickness and temperature, and also develop a general analytical model considering distinct bulk and interface contributions on spin relaxation. Our analysis, based on the above model, quantitatively illustrates a unique property of the spin transport near the Rashba interface, revealing a prominent role of the spin relaxation process by determining the ratios of the spin relaxation inside and outside the interface. We further find the characteristic spin transport is unaffected by temperature. Our results provide an essential tool for exploring the transport in a system with spin-momentum-locked two-dimensional states.