Effects of process parameter variations on the removal rate in chemical mechanical polishing of 4H-SiC
Effects of process parameter variations on the removal rate in chemical mechanical polishing of 4H-SiC
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DOI：
10.1007/s11664-001-0111-2
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发表时间：
2001-10-01
影响因子：
2.1
通讯作者：
Hengehold, RL
中科院分区：
文献类型：
--
作者：
Nelson, CL;Mitchel, WC;Hengehold, RL
研究了硅胶抛光液和氨纶/聚酯纤维抛光垫化学机械抛光4H-碳化硅晶片时，温度、抛光液pH值、外加压力和抛光转速对材料去除速率的影响。测量的去除速率从大约100埃/小时到近2500埃/小时不等，这取决于各种参数的值。材料的去除量是通过测量抛光前后的晶片质量来确定的。温度和浆液pH的变化对测量的去除速率没有明显的影响。较高的抛光压力会导致材料去除速度从200埃/小时增加到500埃/小时，但也会产生过度的抛光垫损坏。衬垫转速的变化对材料去除速度产生了最大的变化，在60到180转/分钟的转速下，从大约200埃/小时到大约2000埃/小时，但这些变化是非线性的，有些不一致。这种化学机械抛光配方可以始终如一地产生无损伤表面，但最佳去除速度较慢。
The effects of temperature, slurry pH, applied pressure, and polishing rotation rate on the material removal rate during chemical mechanical polishing (CMP) of 4H-silicon carbide wafers using colloidal silica slurry and polyurethane/polyester fiber polishing pads have been studied. Measured removal rates varied from around 100 Angstrom /hr to nearly 2500 Angstrom /hr depending on the values of the various parameters. The amount of material removed was determined by measuring the wafer mass before and after polishing. Variations in temperature and slurry pH did not produce significant changes in the measured removal rates. Highernolishing pressures resulted in increased material removal rates from 200 to 500 Angstrom /hr but also produced excessive polishing pad damage. Variations in pad rotational speeds produced the largest changes in material removal rates, from around 200 to around 2000 Angstrom /hr for rotational speeds between 60 and 180 rpm, but the variations were non-linear and somewhat inconsistent. This CMP formula is shown to consistently produce damage free surfaces but the optimum removal rate is slow.