In situ spectroscopic ellipsometry in molecular beam epitaxy for photonic devices
In situ spectroscopic ellipsometry in molecular beam epitaxy for photonic devices
复制标题
光子器件分子束外延中的原位光谱椭圆测量
DOI：
10.1016/0169-4332(93)90055-g
复制
发表时间：
1993
影响因子：
6.7
通讯作者：
R. Droopad
中科院分区：
文献类型：
--
作者：
G. Maracas;J. Edwards;D. S. Gerber;R. Droopad
原位椭偏光谱（SE）已被证明是一种用于监测超高真空外延生长系统生长的通用技术。例如，在固体源和气体源MBE中，测量了异质结构生长过程中衬底温度、生长速率、合金成分和生长层厚度等典型的MBE参数。在有生长中断和没有生长中断的情况下，对AlAs/GaAs量子阱的生长进行了实时监测。然后确定了异质结界面突然性的差异。本文首先讨论了在气源MBE上实现SE的一些实际考虑。然后将介绍监测衬底温度、氧化物脱附、表面平滑和测试结构异质结生长的例子，然后演示量子阱生长和生长中断。本文首次使用高温GaAs和AlAs光学常数在MBE生长温度下测定厚度和合金成分，从而实现了用于垂直腔激光器和调制器的分布式Bragg反射器的生长和校准。
In situ spectroscopic ellipsometry (SE) has been shown to be a versatile technique for monitoring growth in ultrahigh vacuum epitaxial growth systems. For instance, typical MBE parameters of substrate temperature, growth rate, alloy composition and thickness of growing layers have been measured during the growth of heterostructures in solid-source and gas-source MBE. The growth of AlAs/GaAs quantum wells has also been investigated in studies where the growth was monitored in real time with and without growth interruption. The difference in interfacial abruptness of the heterojunction was then determined. This paper first discusses some practical considerations of implementing an SE onto a gas-source MBE. Examples of monitoring substrate temperature, oxide desorption, surface smoothing and heterojunction growth of a test structure will then be presented followed by a demonstration of quantum well growth and growth interruption. The first use of high-temperature GaAs and AlAs optical constants for thickness and alloy composition determination at the MBE growth temperature is presented which enabled the growth and calibration of distributed Bragg reflectors for use in vertical cavity lasers and modulators.