Arrays of ZnO/AZO (Al-doped ZnO) nanocables: A higher open circuit voltage and remarkable improvement of efficiency for CdS-sensitized solar cells
Arrays of ZnO/AZO (Al-doped ZnO) nanocables: A higher open circuit voltage and remarkable improvement of efficiency for CdS-sensitized solar cells
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ZnO/AZO（Al掺杂ZnO）纳米电缆阵列：提高CdS敏化太阳能电池的开路电压并显着提高效率
DOI：
10.1016/j.jcis.2013.11.017
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发表时间：
2014-03-15
影响因子：
9.9
通讯作者：
Yang, Zhi
中科院分区：
文献类型：
--
作者：
Deng, Jianping;Wang, Minqiang;Yang, Zhi
研究了以Al掺杂ZnO（AZO）为壳层的ZnO纳米线（NWs）作为CdS量子点敏化太阳能电池（QDSSC）的纳米电缆（NC）结构光电极。ZnO纳米线是制备AZO壳层的骨架，由于AZO（n-ZnO）的电子迁移率比i-ZnO高，电子在AZO壳层中的输运速度更快。采用旋涂法将AZO壳层组装到ZnO纳米线表面。ZnO/AZO薄膜的光学带隙从纯ZnO的3.19 eV变化到AZO（15%）的3.25 eV，这取决于Al掺杂浓度。随着Al掺杂量（从0%增加到20%）和退火温度的升高，AZO/ZnO的发光强度η先增大后减小。值得注意的是，Al掺杂后的V值可以达到0.8V以上。暗电流和吸收光谱分别提供了J（sc）和V成比例增加的直接证据。此外，还讨论了Al掺杂对样品光学带隙和电子转移的影响。Crown Copyright（C）2013 Published by Elsevier Inc. All rights reserved.
Photoelectrode of nanocables (NCs) structure of ZnO nanowires (NWs) coated with Al-doped ZnO (AZO) shells was investigated for CdS quantum dots sensitized solar cells (QDSSCs). ZnO NWs serve as the frame for the preparation of AZO shells, in which elec-tron transport more rapidly due to the more higher electron mobility of AZO (n-ZnO) than that of i-ZnO. AZO shells were assembled onto the surface of ZnO NWs via a spin-coating method. Optical band-gap of the ZnO/AZO films varies from 3.19 eV for pure ZnO to 3.25 eV for AZO (15%) depending on the Al-doping concentration. The PL intensity of AZO/ZnO, eta of the cells first increased and then decreased with the increase in the AI-doping (from 0% to 20%) and post-annealed temperature. Remarkably, the value of V, can achieve above 0.8 V after Al-doping. The dark current and absorption spectrum provided direct evidence of the increase in J(sc) and V proportional to, respectively. Moreover, we discussed the effect of Al-doping On optical band-gap of the samples and the transfer of electron. Crown Copyright (C) 2013 Published by Elsevier Inc. All rights reserved.