Preparation and Characterization of High Quality Lead-free BiFeO3 Thin Films by Sputtering Process

Preparation and Characterization of High Quality Lead-free BiFeO3 Thin Films by Sputtering Process
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溅射工艺制备高质量无铅 BiFeO3 薄膜及表征

DOI：
10.1109/icetet.2012.12
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发表时间：
2012
期刊：
IEEE Proceedings of 2012 Fifth International Conference on Emerging Trends in Engineering and Technology (ICETET)
影响因子：
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通讯作者：
Seiji Nakashima
Seiji Nakashima
中科院分区：
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文献类型：
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作者：
N. Itagaki;K. Kuwahara;K. Matsushima;K. Oshikawa;Seiji Nakashima

文献摘要

相似文献

采用溅射法在SrTiO 3（001）单晶基片上制备了适合批量生产的BiFeO 3（BFO）薄膜。畴结构可以通过SrTiO 3衬底的切角和方向来控制。横向PFM和XRD倒易空间映射结果表明，BFO薄膜在沿[110]方向沿着4°偏切的SrTiO 3（001）上为单畴结构。单畴BFO在室温下表现出良好的饱和铁电D-E电滞回线。
BiFeO3(BFO) thin films have been prepared on SrTiO3(001) single crystal substrates by sputtering process which is suitable for mass production. Domain structure can be controlled by off-cut angle and direction of SrTiO3substrates. A lateral PFM and a XRD reciprocal space mapping results reveal the BFO thin film on SrTiO3(001) with 4° off-cut along [110] is single domain. The single domain BFO shows well-saturated ferroelectric D-E hysteresis loops at R.T.