Correlation between optical and structural properties of (Al,Ga)N layers grown by MOCVD
Correlation between optical and structural properties of (Al,Ga)N layers grown by MOCVD
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DOI：
10.1002/pssa.200673538
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发表时间：
2007-01
期刊：
影响因子：
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通讯作者：
U. Jahn;D. Jiang;K. Ploog;Xiaolan Wang;Degang Zhao;Hui Yang
中科院分区：
文献类型：
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作者：
U. Jahn;D. Jiang;K. Ploog;Xiaolan Wang;Degang Zhao;Hui Yang
For both, (Al,Ga)N with low Al content grown on a GaN nucleation layer and (Al,Ga)N with high Al content gown on an AlN nucleation layer, the inhomogeneous distribution of the luminescence is linked to the distribution of defects, which may be due to inversion domains. In the former system, defect regions exhibit a much lower Al content than the nominal one leading to a splitting of the respective luminescence spectra. In the latter system, a domain‐like growth is observed with a pyramidal surface morphology and non‐radiative recombination within the domain boundaries. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
