Control of Polarity in Kagome-NiAs Bismuthides.
Control of Polarity in Kagome-NiAs Bismuthides.
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Kagome-NiAs 铋化物极性的控制。
DOI：
10.1002/anie.202403670
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发表时间：
2024
期刊：
影响因子：
--
通讯作者：
Gibson QD
中科院分区：
文献类型：
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作者：
Gibson QD
报道了P63/mmcNiAs结构的2×2×1超结构，其中kagome网稳定在化合物Ni 0.7Pd 0.2Bi，Ni 0.6Pt 0.4Bi和Mn 0.99Pd 0.01Bi的八面体过渡金属层中。有序的空位产生真正的六方kagome图案，导致过渡金属填充三角双锥间隙位点在这个家庭的“kagome-NiAs”型材料。这些间隙层中的空位的进一步有序化可以在成分上被驱动，以同时产生kagome连接的层和沿着Ni 0.9 Bi和Ni 0.79 Pd 0.08 Bi中的轴的净极化沿着，其采用Fmm 2对称性。极性和非极性材料表现出不同的电子输运行为，反映了NiAs型铋化物材料家族中结构和性能的一致性。
A 2×2×1 superstructure of theP63/mmcNiAs structure is reported in which kagome nets are stabilized in the octahedral transition metal layers of the compounds Ni0.7Pd0.2Bi, Ni0.6Pt0.4Bi, and Mn0.99Pd0.01Bi. The ordered vacancies that yield the true hexagonal kagome motif lead to filling of trigonal bipyramidal interstitial sites with the transition metal in this family of “kagome‐NiAs” type materials. Further ordering of vacancies within these interstitial layers can be compositionally driven to simultaneously yield kagome‐connected layers and a net polarization along thecaxes in Ni0.9Bi and Ni0.79Pd0.08Bi, which adoptFmm2 symmetry. The polar and non‐polar materials exhibit different electronic transport behaviour, reflecting the tuneability of both structure and properties within the NiAs‐type bismuthide materials family.