Photoreactivity of alkylsilane self-assembled monolayers on silicon surfaces and its application to preparing micropatterned ternary monolayers
Photoreactivity of alkylsilane self-assembled monolayers on silicon surfaces and its application to preparing micropatterned ternary monolayers
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DOI：
10.1021/la0205194
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发表时间：
2003-03-18
期刊：
影响因子：
3.9
通讯作者：
Takai, O
中科院分区：
文献类型：
--
作者：
Hong, L;Sugimura, H;Takai, O
在波长为172 nm的真空紫外光（VUV）照射下，研究了Si衬底上正十八烷基三甲氧基硅烷自组装单层（ODS-SAM）的光反应性。水接触角、膜厚和x射线光电子能谱分析结果表明，由于VUV光的照射，ODS-SAM逐渐分解。氧化产物，即-COOH基团，在ODS-SAM被完全分解并从底物中去除之前就已经形成。利用-OCH3官能团与-COOH官能团在vuv修饰的ODS-SAM上的反应，成功制备了共面三元有机硅烷SAM微观结构。
The photoreactivity of an n-octadecyltrimethoxysilane self-assembled monolayer (ODS-SAM) on a Si substrate was investigated under the irradiation of vacuum ultraviolet (VUV) light of 172 nm in wavelength. The results of water contact angle, film thickness, and X-ray photoelectron spectroscopy analysis showed that the ODS-SAM decomposed gradually due to the VUV light exposure. Oxidized products, that is, -COOH groups, had formed before the ODS-SAM was completely decomposed and removed from the substrate. Coplanar ternary organosilane SAM microstructures have been successfully fabricated by employing the reaction between -OCH3 functional groups with -COOH groups on the VUV-modified ODS-SAM.