Development of thermal shock-resistant of GaN/DBC die-attached module by using Ag sinter paste and thermal stress relaxation structure
Development of thermal shock-resistant of GaN/DBC die-attached module by using Ag sinter paste and thermal stress relaxation structure
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DOI：
10.1016/j.microrel.2018.07.044
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发表时间：
2018-09-01
影响因子：
1.6
通讯作者：
Suganuma, Katsuaki
中科院分区：
文献类型：
--
作者：
Kim, Dongjin;Chen, Chuantong;Suganuma, Katsuaki
设计了Ag烧结浆料/W薄膜/Ag烧结浆料夹芯贴合层结合的GaN模贴/DBC衬底连接结构，并对其高温可靠性进行了研究。采用镀有W薄膜的银烧结浆料，在220℃、0.4 MPa条件下烧结60 min，将GaN芯片与DBC衬底结合。接头结构在-50至250摄氏度的温度范围内进行了长达1000次的热冲击测试。GaN/DBC接头结构的初始平均模抗剪强度约为30 MPa，可维持1000次循环。结果表明，银烧结浆料/钨薄膜/银烧结浆料夹芯模附层具有较好的抗热震性能。通过FE-SEM和EDX分析观察了GaN/DBC接头组织在热冲击试验过程中的组织演变。此外，本研究还进行了有限元数值模拟，结果表明，具有夹芯贴合层的GaN/DBC连接结构对外力具有应力屏蔽效应，从而实现了适用于高温环境的宽带隙半导体的可靠功率模块结构。
GaN die-attach/DBC substrate joint structure bonded by Ag sinter paste/W thin film/Ag sinter paste sandwich die-attached layer was designed and its high-temperature reliability was investigated. GaN chips were bonded to DBC substrate using Ag sinter paste with thin W film at 220 degrees C and at 0.4 MPa for 60 min. The joints structure was subjected to thermal shock testing in temperature range of -50 to 250 degrees C for duration up to 1000 cycles. The initial average die shear strength of the GaN/DBC joint structure was about 30 MPa, and was maintained up to 1000 cycles. These results reveal that Ag sinter paste/W thin film/Ag sinter paste sandwich die-attached layer can provide a superior thermal shock resistant. The microstructure evolution of GaN/DBC joint structure during the thermal shock testing was observed by FE-SEM and EDX analysis. In addition, FEM numerical simulation has also been implemented in this study, which revealed that the GaN/DBC joint structure with the sandwich die attached layer shows a stress-shielding effect from the external force, and thus achieves a reliable power module structure for wide-bandgap semiconductors for its application in high-temperatures.