Atmospheric oxygen plasma activation of silicon (100) surfaces
Atmospheric oxygen plasma activation of silicon (100) surfaces
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DOI：
10.1116/1.3374738
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发表时间：
2010-05-01
影响因子：
2.9
通讯作者：
Hicks, Robert F.
中科院分区：
文献类型：
--
作者：
Habib, Sara B.;Gonzalez, Eleazar, II;Hicks, Robert F.
通过射频、大气压氦和氧等离子体处理，硅（100）表面转化为亲水状态，水接触角< 5度。2英寸。宽等离子束，工作功率为250 W， 1.0 l/min O-2, 30 l/min He，源到样品的距离为3 +/- 0.1 mm，以100 +/- 2mm /s的速度扫描样品。等离子体氧化使表面能色散成分从55.1 dyn/cm降低到25.8 dyn/cm，而表面能极性成分从0.3 dyn/cm增加到42.1 dyn/cm。x射线光电子能谱分析表明，该处理在Si（100）表面形成了一层厚度为0.15 +/- 0.10 nm的共价键氧层。通过监测水接触角随处理时间的变化来测量表面氧化动力学，并且与受基态氧原子向硅表面的传质限制的过程一致。
Silicon (100) surfaces were converted to a hydrophilic state with a water contact angle of < 5 degrees by treatment with a radio frequency, atmospheric pressure helium, and oxygen plasma. A 2 in. wide plasma beam, operating at 250 W, 1.0 l/min O-2, 30 l/min He, and a source-to-sample distance of 3 +/- 0.1 mm, was scanned over the sample at 100 +/- 2 mm/s. Plasma oxidation of HF-etched silicon caused the dispersive component of the surface energy to decrease from 55.1 to 25.8 dyn/cm, whereas the polar component of the surface energy increased from 0.3 to 42.1 dyn/cm. X-ray photoelectron spectroscopy revealed that the treatment generated a monolayer of covalently bonded oxygen on the Si(100) surface 0.15 +/- 0.10 nm thick. The surface oxidation kinetics have been measured by monitoring the change in water contact angle with treatment time, and are consistent with a process that is limited by the mass transfer of ground-state oxygen atoms to the silicon surface.