Heteroepitaxial growth of gallium nitride on muscovite mica plates by pulsed laser deposition
Heteroepitaxial growth of gallium nitride on muscovite mica plates by pulsed laser deposition
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DOI：
10.1016/j.ssc.2005.08.010
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发表时间：
2005-11-01
影响因子：
2.1
通讯作者：
Fujioka, H
中科院分区：
文献类型：
--
作者：
Matsuki, N;Kim, TW;Fujioka, H
我们首次使用脉冲激光沉积在云母基板上生长 GaN 薄膜，并使用电子束和 X 射线衍射研究了其结构特性。我们发现GaN（000-1）生长在云母（001）上，面内排列为[11-20]GaN//[010]云母。尽管GaN和云母之间存在较大的晶格失配，沿[100]云母和[010]云母方向分别为6%和43%，但在薄膜中几乎观察不到立方GaN相或30度旋转域。这种现象可归因于云母表面上大的原子平坦平台和弱范德华键导致薄膜前体的表面迁移增强。 (C) 2005 Elsevier Ltd. 保留所有权利。
We have grown GaN films on mica substrates using pulsed laser deposition for the first time and investigated their structural properties using electron beam and X-ray diffraction. We found that GaN (000-1) grows on mica (001) with an in-plane alignment of [11-20] GaN//[010] mica. Despite the large lattice mismatch between GaN and mica, 6 and 43% along the [100] mica and [010] mica directions, respectively, cubic GaN phase or 30 degrees rotated domains are scarcely observed in the film. This phenomenon can be attributed to the enhanced surface migration of film precursors due to the large atomically flat terraces and the weak Van der Waals bonding on the mica surface. (C) 2005 Elsevier Ltd. All rights reserved.