Optimization of Gallium Nitride-Based Laser Diode Through Transverse Modes Analysis
Optimization of Gallium Nitride-Based Laser Diode Through Transverse Modes Analysis
复制标题
通过横向模式分析优化氮化镓基激光二极管
作者：
通过数值计算研究了GaN量子阱（QW）激光二极管（LD）的横向模式。我们通过改变n-GaN层厚度来优化当前的GaN LD结构。n型氮化镓层是决定其光学模式的重要因素。最后，我们讨论了基于横向光模式的GaN LD的激光性能。
We investigate the transverse mode pattern in GaN quantum-well (QW) laser diode (LD) by numerical calculation. We optimize the current GaN LD structure by varying the n-GaN layer thickness. The n-type GaN layer is an important factor to determine the optical mode. Finally, we discuss the lasing performance of the GaN LD based on the transverse optical modes.