Bound-exciton absorption in Si:Al, Si:Ga, and Si:In
Bound-exciton absorption in Si:Al, Si:Ga, and Si:In
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Si:Al、Si:Ga 和 Si:In 中的束缚激子吸收
DOI：
10.1103/physrevb.17.1808
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发表时间：
1978
期刊：
影响因子：
--
通讯作者：
T. C. Mcgill
中科院分区：
文献类型：
--
作者：
K. Elliott;G. Osbourn;D. Smith;T. C. Mcgill
我们给出了对Si：Al、Si：Ga和Si：In的束缚激子吸收的高分辨率测量。在每种情况下，我们都观察到了由于束缚激子的基态和两个激发态而产生的至少三条吸收线。通过比较测量的三条吸收线的非声子振子强度与这些量的计算，我们确定了三重态结构是晶场中空穴-空穴耦合的结果。我们根据观察到的振子强度为这三个态分配对称性标记。我们观察到由于Si：In中束缚激子的两个高激发态，使Si：Al中最低能线发生了小的谷轨道分裂和吸收。
We present high-resolution measurements of bound-exciton absorption for Si: Al, Si: Ga, and Si: In. In each case we observe at least three absorption lines due to the ground state and two excited states of the bound exciton. By comparing the measured no-phonon oscillator strengths for the three absorption lines with calculations of these quantities we establish that the triplet structure results from hole-hole coupling in the crystal field. We assign symmetry labels to the three states based on the observed oscillator strengths. We observed a small valley-orbit splitting of the lowest-energy line in Si: Al and absorption due to two highly excited states of the bound exciton in Si: In.