The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing
The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing
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DOI：
10.1063/1.4728028
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发表时间：
2012-06-01
影响因子：
3.2
通讯作者：
Sweeney, S. J.
中科院分区：
文献类型：
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作者：
Batool, Z.;Hild, K.;Sweeney, S. J.
GaBixAs 1-x bismide III-V半导体系统仍然是一个相对欠探索的合金，特别是关于其详细的电子能带结构。对于理解该系统的物理学特别重要的是带隙能量E-g和自旋轨道分裂能量Delta（o）如何作为Bi含量的函数相对于彼此变化，因为在该合金中，对于较高的Bi分数，Delta（o）超过Eg变得可能，这种情况对于最小化这种结构中的非辐射俄歇复合损耗具有重要意义。然而，这一情况迄今尚未在该系统中实现。在这里，我们研究了一组GaBixAs 1-x（2.3%）外延层，
The GaBixAs1-x bismide III-V semiconductor system remains a relatively underexplored alloy particularly with regards to its detailed electronic band structure. Of particular importance to understanding the physics of this system is how the bandgap energy E-g and spin-orbit splitting energy Delta(o) vary relative to one another as a function of Bi content, since in this alloy it becomes possible for Delta(o) to exceed Eg for higher Bi fractions, which occurrence would have important implications for minimising non-radiative Auger recombination losses in such structures. However, this situation had not so far been realised in this system. Here, we study a set of epitaxial layers of GaBixAs1-x (2.3%