Micro-crystalline phase formation in hot wire deposited Si:C:H alloy films from pure methane and silane mixtures
Micro-crystalline phase formation in hot wire deposited Si:C:H alloy films from pure methane and silane mixtures
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纯甲烷和硅烷混合物热丝沉积 Si:C:H 合金薄膜中微晶相的形成
DOI：
10.1016/s0022-3093(98)00334-2
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发表时间：
1998
影响因子：
3.5
通讯作者：
B. Schröder
中科院分区：
文献类型：
--
作者：
A. Kumbhar;R. Dusane;S. Bauer;B. Schröder
本文尝试用新近发展起来的热线化学气相沉积（HWCVD）技术制备未掺杂的微晶（μc）SiC：H合金薄膜。在沉积过程中使用了SiH_4 + CH_4和SiH_4 + C_2H_2的混合气体，没有氢气稀释。一个广泛的沉积参数空间的衬底温度（Ts），灯丝温度（TF），和气体流量已跨越，以期获得最大的带隙。傅立叶变换红外光谱表明，对于由SiH 4 + CH 4制成的膜，在硅烷饥饿条件下发生Si-C合金形成，如这些膜的IR光谱中的780 cm-1带所示。因此，这些膜的带隙也是大的，从紫外-可见分光光度法测定。然而，最有趣的结果是从拉曼光谱和椭圆偏振仪获得的，其表明在TF=1700°C，Ts = 300°C和在硅烷饥饿条件下制备的膜中存在微晶相。可能的气相反应负责的微晶相的形成进行了讨论。此外，光谱椭偏法已被用来进一步测量薄膜的光学和微观结构特性。宽带隙材料的介电函数的第一个结果。
Attempts to prepare undoped microcrystalline (μc) SiC:H alloy films by the recently developed hot wire chemical vapour deposition (HWCVD) technique have been made. Gas mixtures of SiH4+CH4and SiH4+C2H2with no hydrogen dilution have been used during deposition. A broad deposition parameter space of substrate temperature (Ts), filament temperature (TF), and gas flow has been spanned with a view to obtain a maximum band gap. The Fourier transform infrared spectra show that the Si–C alloy formation takes place under the silane starving conditions for films made from SiH4+CH4as indicated by the 780 cm−1band in the IR spectrum for these films. Consequently, the band gap of these films is also large as determined from ultra violet–visible spectrophotometry. However, the most interesting results are obtained from the Raman spectra and ellipsometry which indicate the presence of a micro-crystalline phase in the films prepared at TF=1700°C, Ts≅300°C and under silane starving conditions. The possible gas phase reactions responsible for the formation of the micro-crystalline phase are discussed. Additionally, spectroscopic ellipsometry has been used to further measure the optical and microstructural properties of the films. First results on the dielectric function of the wide band gap material are presented.