Fast growth of ultrananocrystalline diamond films by bias-enhanced nucleation and growth process in CH4/Ar plasma
Fast growth of ultrananocrystalline diamond films by bias-enhanced nucleation and growth process in CH4/Ar plasma
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CH4/Ar 等离子体中偏压增强成核和生长过程快速生长超纳米晶金刚石薄膜
DOI：
10.1063/1.4875808
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
I. Lin
中科院分区：
文献类型：
--
作者：
A. Saravanan;Bohr‐Ran Huang;K. J. Sankaran;C. Dong;N. Tai;I. Lin
这封信描述了在甲烷/氩气等离子体中通过偏压增强形核与生长工艺实现超纳米晶金刚石（UNCD）薄膜的快速生长。UNCD晶粒在薄膜生长初期形成，无需形成非晶碳中间层，在10分钟内达到约380纳米的厚度。透射电子显微镜研究表明，偏压的施加促使在UNCD薄膜内部以及界面区域形成石墨相，这些石墨相形成相互连接的通道，有利于电子传输，从而使电子场发射性能增强。
This letter describes the fast growth of ultrananocrystalline diamond (UNCD) films by bias-enhanced nucleation and growth process in CH4/Ar plasma. The UNCD grains were formed at the beginning of the film's growth without the necessity of forming the amorphous carbon interlayer, reaching a thickness of ∼380 nm in 10 min. Transmission electron microscopic investigations revealed that the application of bias voltage induced the formation of graphitic phase both in the interior and at the interface regions of UNCD films that formed interconnected paths, facilitating the transport of electrons and resulting in enhanced electron field emission properties.