Volatile and nonvolatile selective switching of a photo-assisted initialized atomic switch
Volatile and nonvolatile selective switching of a photo-assisted initialized atomic switch
复制标题
DOI：
10.1088/0957-4484/24/38/384006
复制
发表时间：
2013-09
期刊：
影响因子：
3.5
通讯作者：
Takami Hino;Tsuyoshi Hasegawa;Hirofumi Tanaka;T. Tsuruoka;K. Terabe;Takuji Ogawa;Masakazu Aono
中科院分区：
文献类型：
--
作者：
Takami Hino;Tsuyoshi Hasegawa;Hirofumi Tanaka;T. Tsuruoka;K. Terabe;Takuji Ogawa;Masakazu Aono
在Ag 2 S电极和Pt电极之间的约20 nm的间隙中具有光电导分子层的光辅助原子开关通过施加使Ag原子从Ag 2 S电极沉淀的小偏压的光照射而被设定为常规间隙型原子开关操作模式。在此初始化之后，开关仅在施加偏压的情况下操作。在这项研究中，我们还发现，在设置操作后，光辅助初始化原子开关根据偏置范围显示出不同的开关模式，即，当所施加的偏置小于阈值偏置时进行易失性切换，而当所施加的偏置大于阈值偏置时进行非易失性切换。这些特性在重新配置电路（例如在神经计算系统中）时可以是有用的。
A photo-assisted atomic switch, which has a photoconductive molecular layer in a gap of about 20 nm between an Ag2S electrode and a Pt electrode, is set to a conventional gap-type atomic switch operation mode by light irradiation with the application of a small bias that precipitates Ag atoms from an Ag2S electrode. After this initialization, the switch operates only with application of a bias. In this study, we also found that after the set-operation a photo-assisted initialized atomic switch shows different switching modes depending on the bias range, i.e., volatile switching when the applied bias is smaller than the threshold bias, and nonvolatile switching when the applied bias is larger than the threshold bias. These characteristics can be useful in reconfiguring a circuit such as in neural computing systems.