Solution-Grown CsPbBr(3) Perovskite Single Crystals for Photon Detection.
Solution-Grown CsPbBr(3) Perovskite Single Crystals for Photon Detection.
复制标题
DOI：
10.1021/acs.chemmater.6b04298
复制
发表时间：
2016-12-13
期刊：
影响因子：
--
通讯作者：
Kovalenko MV
中科院分区：
文献类型：
--
作者：
Dirin DN;Cherniukh I;Yakunin S;Shynkarenko Y;Kovalenko MV
具有钙钛矿晶体结构和APbX3化学计量的卤化铅半导体[A= CH3NH3+（甲基铵，MA+）， CH (NH2) 2+（甲脒，FA+），或Cs+；X= I−,Br−，Cl−或其混合物]最近可能成为研究最深入的一类无机光电材料。这些材料在光伏电池中作为溶液处理吸收剂表现出前所未有的性能，经认证的功率转换效率目前超过22% 1，这些材料很快也被用于发光二极管，2激光器，3紫外-红外光电探测器4−7以及x射线8−10伽马射线（γ射线）探测器。在这些应用中，利用溶液或布里奇曼生长的大单晶（SCs）、4、8、12−18薄膜或钙钛矿的纳米晶形式。如此多样化的应用在很大程度上是由于这些半导体的所谓缺陷容限19,20：尽管点缺陷密度很大，但电子陷阱态密度很低。几个常见的报告参数举例说明了钙钛矿杰出的光物理和电子质量：低载流子密度（109−1011 cm−3）、14、21个低密度阱（109−1010 cm−3）、14、22个比单晶硅低的载流子迁移率（2.5−1000 cm2 V−1 s−1）、12、14、17、20、23个长载流子寿命（0.08−450 μs）、12、14、16、17、24、25个长电子空穴扩散长度（2−175 μm）、14、16、24个小载流子有效质量（0.069−0.25 μ 0）。26 .吸收边光学吸收系数高（1−4.5× 104 cm−1），发光效率高。27,28以大晶胞形式生长半导体的能力一直是最重要的技术和科学重要性。例如，最先进的硅太阳能电池是由大型SC铸锭制成的。SCs尽可能地反映半导体的固有物理特性，并且与相同化合物的纳米或多晶形式相比，通常表现出更好的电子特性。例如，在MAPbI3的情况下，SCs表现出高达200 cm2 V−1 s−1的载流子迁移率（薄膜中为0.4−40 cm2 V−1 s−1）和高达500 μs的寿命（薄膜和纳米晶体中为4.5−1000 ns）。17,20除了研究基本的物理性质外，还需要SCs来确定新化合物的结构和改进已知材料的结构。29,30钙钛矿sc的化学稳定性也明显高于薄膜sc。最近，人们开发了几种基于溶液的方法来生长厘米级钙钛矿SCs。它们可以分为三类：(i)饱和水盐溶液（17、32）或有机溶剂溶液冷却后的缓慢结晶（33）（ii）缓慢反溶剂扩散导致溶剂极性变化的结晶（14、34）和（iii）逆温度结晶（ITC）， 16、21、24、35−38，最初由Bakr等人提出。结晶是由于在某些有机溶剂中溶解度对温度的反依赖性引起的，总体生长相对较快，例如在几个小时内。所有MAPbX3和FAPbX3组成的厘米级SCs都可以通过这三种方法中的至少一种生长，从而可以研究它们的内在电子8、14、39、40和光学性质，这些在去年已经有报道。4,15, 41−43相反，全无机CsPbX3 SCs的溶液生长仍然难以捉摸。这种全无机类似物或许可以克服杂化钙钛矿化学不稳定性的已知问题。18,31,32虽然从…
Lead halide semiconductors with perovskite crystal structure and APbX3 stoichiometry [A= CH3NH3+(methylammonium, MA+), CH (NH2) 2+(formamidinium, FA+), or Cs+; X= I−, Br−, Cl− or mixtures thereof] have recently become perhaps the most intensely studied class of inorganic optoelectronic materials. After exhibiting unprecedented performance as solution-processed absorbers in photovoltaics with certified power conversion efficiencies presently exceeding 22%, 1 these materials were soon also used in light-emitting diodes, 2 lasers, 3 ultraviolet-to-infrared photodetectors 4− 7 as well as in X-ray 8− 10 gamma-ray (γ-ray) detectors. 11− 13 In these applications, solution-or Bridgman-grown large single crystals (SCs), 4, 8, 12− 18 thin-films or nanocrystalline forms of perovskites are utilized. Such a diversity of applications is to a large extent due to the so-called defect-tolerance 19, 20 of these semiconductors: a low density of electronic trap states despite a large density of point defects. Several commonly reported parameters exemplify the outstanding photophysical and electronic quality of perovskites: low densities of carriers (109− 1011 cm− 3), 14, 21 low densities of traps (109− 1010 cm− 3), 14, 22 which are lower than in monocrystalline Si, 20 high carrier mobilities (2.5− 1000 cm2 V− 1 s− 1), 12, 14, 17, 20, 23 long charge carrier lifetimes (0.08− 450 μs), 12, 14, 16, 17, 24, 25 long electron− hole diffusion lengths (2− 175 μm), 14, 16, 24 small carrier effective masses (0.069− 0.25 m0), 26 high optical absorption coefficients at the absorption edge (1− 4.5× 104 cm− 1) 20 and high luminescence efficiencies. 27, 28 The ability to grow semiconductors in the form of large SCs has always been of paramount technological and scientific importance. For instance, state-of-the-art Si solar cells are made from large SC ingots. SCs reflect, as close as possible, the intrinsic physical properties of a semiconductor and usually exhibit better electronic characteristics as compared to nano-or polycrystalline forms of the same compound. In the case of MAPbI3, for example, SCs exhibit carrier mobilities of up to 200 cm2 V− 1 s− 1 (vs 0.4− 40 cm2 V− 1 s− 1 in thin-films) and lifetimes of up to 500 μs (vs 4.5− 1000 ns in films and nanocrystals). 17, 20 Beyond studies of fundamental physical properties, SCs are required for the structural determination of novel compounds and for structural refinement of known materials. 29, 30 Perovskite SCs are notably also more chemically stable than their thin-film counterparts. 31Recently, several solution-based approaches to growing centimeter-scale perovskite SCs have been developed. They can be divided into three categories:(i) slow crystallization upon cooling saturated aqueous hydrohalic solutions 17, 32 or solutions in organic solvent, 33 (ii) crystallization due to a change of the solvent polarity by slow antisolvent diffusion 14, 34 and (iii) inverse temperature crystallization (ITC), 16, 21, 24, 35− 38 initially proposed by Bakr et al. 24, 36 In the lattermost method, crystallization is caused by the inverse solubility dependence on temperature in some organic solvents and the overall growth occurs relatively fast, eg, within several hours. Centimeter-scale SCs of all MAPbX3 and FAPbX3 compositions can be grown by at least one of these three approaches, enabling studies of their intrinsic electronic 8, 14, 39, 40 and optical properties, which have been reported within the last year. 4, 15, 41− 43 On the contrary, the solution-based growth of fully inorganic CsPbX3 SCs remained elusive. Such all-inorganic analogs could perhaps overcome the known issues of chemical instability of hybrid perovskites. 18, 31, 32 Although known since the …
登录
查看更多内容
影响因子：
16.6
作者：
Daub, Michael;Hillebrecht, Harald
通讯作者：
Hillebrecht, Harald
影响因子：
3.7
作者：
Clark, D. J.;Stoumpos, C. C.;Jang, J. I.
通讯作者：
Jang, J. I.
影响因子：
9
作者：
Liu, Yucheng;Sun, Jiankun;Liu, Shengzhong (Frank)
通讯作者：
Liu, Shengzhong (Frank)
影响因子：
35
作者：
Lin, Qianqian;Armin, Ardalan;Meredith, Paul
通讯作者：
Meredith, Paul
DOI：
10.1515/zna-1971-0812
发表时间：
1971-01-01
期刊：
ZEITSCHRIFT FUR NATURFORSCHUNG PART A-ASTROPHYSIK PHYSIK UND PHYSIKALISCHE CHEMIE
影响因子：
--
作者：
COLA, M;MASSAROT.V;SINISTRI, C
通讯作者：
SINISTRI, C