An 8-ch, 20-V Output CMOS Switching Driver with 3.3-V Power Supply for Integrated MEMS Devices Controlling
An 8-ch, 20-V Output CMOS Switching Driver with 3.3-V Power Supply for Integrated MEMS Devices Controlling
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DOI：
10.7567/ssdm.2013.ps-5-1
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发表时间：
2013
期刊：
影响因子：
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通讯作者：
M. Takayasu;A. Shirane;Sang-yeop Lee;D. Yamane;Hiroyuki Ito;X. Mi;H. Inoue;F. Nakazawa;S. Ueda;N. Ishihara;K. Masu
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文献类型：
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作者：
M. Takayasu;A. Shirane;Sang-yeop Lee;D. Yamane;Hiroyuki Ito;X. Mi;H. Inoue;F. Nakazawa;S. Ueda;N. Ishihara;K. Masu
采用0.18-m CMOS工艺技术，实现了用于集成微机电系统（MEMS）器件控制的8ch输出开关驱动器。驱动器在3.3 v电源下，可为1 nf容性负载输出20v开关信号。为了获得超过晶体管击穿电压的高输出电压，研究了用于电荷泵和放电电路的三良好结构n-MOS晶体管的最佳晶体管良好偏置技术。
Abstract An 8-ch output switching driver has been implemented for integrated MEMS (Micro Electro Mechanical Systems) devices controlling by using the 0.18-m CMOS process technology. The driver can output 20-V switching signals for 1-nF capacitive loads with 3.3-V power supply. To get high output voltage exceeding the transistor’s breakdown voltage, optimal transistor-well-biasing techniques for triple-well-structured n-MOS transistors, employed in the charge pump and the discharge circuits, has been investigated.