Anomalous high capacitance in a coaxial single nanowire capacitor
Anomalous high capacitance in a coaxial single nanowire capacitor
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DOI：
10.1038/ncomms1833
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发表时间：
2012-06-01
影响因子：
16.6
通讯作者：
Ajayan, Pulickel M.
中科院分区：
文献类型：
--
作者：
Liu, Zheng;Zhan, Yongjie;Ajayan, Pulickel M.
在单根奈米线上建立完整的多元件装置，是微型化电子应用的一种很有前途的策略。在这里，我们展示了一种同轴不对称Cu-Cu2O-C结构的单纳米线电容器，采用两步化学反应和气相沉积方法制备。从单个纳米线器件测量到的电容相当于140 μ F cm(-2)，超过了先前报道的金属-绝缘体-金属微电容器的值，并且比经典静电学预测的值高出一个数量级。量子力学计算表明，这种不寻常的高电容可能归因于介电-金属界面的负量子电容，在纳米尺度上显着增强。
Building entire multiple-component devices on single nanowires is a promising strategy for miniaturizing electronic applications. Here we demonstrate a single nanowire capacitor with a coaxial asymmetric Cu-Cu2O-C structure, fabricated using a two-step chemical reaction and vapour deposition method. The capacitance measured from a single nanowire device corresponds to similar to 140 mu F cm(-2), exceeding previous reported values for metal-insulator-metal micro-capacitors and is more than one order of magnitude higher than what is predicted by classical electrostatics. Quantum mechanical calculations indicate that this unusually high capacitance may be attributed to a negative quantum capacitance of the dielectric-metal interface, enhanced significantly at the nanoscale.