Type II superlattice infrared detector and focal plane arrays
Type II superlattice infrared detector and focal plane arrays
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DOI：
10.1117/12.723730
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发表时间：
2007-05
期刊：
影响因子：
--
通讯作者：
V. Nathan;M. Razeghi
中科院分区：
文献类型：
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作者：
V. Nathan;M. Razeghi
Ⅱ型超晶格光电探测器在理论结构设计和实验实现方面都有了很大的发展。经验紧束缚方法是针对第二类超晶格提出并发展起来的。该模型考虑了V族偏析和掺入等生长特征，具有较高的精度。介绍了一种新的II型结构，称为M结构，并从理论上证明了高的罗阿，高量子效率。优化器件设计以提高性能。结果表明，在77 K时，截止波长为11.7 m的光电探测器的量子效率为55%，罗阿（RoA）为10 Ohm.cm ~ 2。焦平面阵列在长波长下的成像能力可达171 K。在81 K时，噪声等效温差在0.33K处出现峰值。
Type II superlattce photodetectors have recently experienced significant improvements in both theoretical structure design and experimental realization. Empirical Tight Binding Method is initiated and developed for Type II superlattice. Growth characteristics such as group V segregation and incorporation phenomena are taken into account in the model and shown higher precision. A new Type II structure, called M-structure, is introduced and theoretically demonstrated high RoA, high quantum efficiency. Device design is optimized to improve the performance. As a result, 55% quantum efficiency and 10 Ohm.cm2 RoA are achieved for an 11.7 m cut-off photodetector at 77K. FPA imaging at longwavelength is demonstrated with a capability of imaging up to 171K. At 81K, the noise equivalent temperature difference presented a peak at 0.33K.