Hysteresis in volume fraction of clusters incorporated into a-Si:H films deposited by SiH4 plasma chemical vapor deposition
Hysteresis in volume fraction of clusters incorporated into a-Si:H films deposited by SiH4 plasma chemical vapor deposition
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SiH4 等离子体化学气相沉积沉积的 a-Si:H 薄膜中团簇体积分数的滞后现象
DOI：
10.1016/j.surfcoat.2017.01.034
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发表时间：
2017
期刊：
影响因子：
--
通讯作者：
and M. Shiratani
中科院分区：
文献类型：
--
作者：
S. Toko;Y. Torigoe;K. Keya;T. Kojima;H. Seo;N. Itagaki;K. Koga;and M. Shiratani
SiH 4放电等离子体沉积的氢化非晶硅薄膜中，团簇的掺入对SiH 2键的形成有重要影响，而SiH 2键的形成与薄膜的光致降解密切相关，因此抑制团簇的掺入是提高薄膜稳定性的关键。在这里，我们报告滞后的沉积速率和集群的体积分数纳入a-Si：H薄膜的SiH 4等离子体CVD沉积;的沉积速率和体积分数显示循环行为时，依次改变放电功率，因为在前面的条件下形成的集群往往会留在等离子体中，并影响显着的沉积速率和体积分数。滞后也被示出为SiH* 发射强度的函数，由于SiH 4的电子碰撞解离而与自由基产生速率成比例。通过利用滞后现象，可以显著降低膜中团簇的体积分数。我们提出了一个含团簇的等离子体模型，其中团簇在滞后中起着关键作用，即沉积速率和团簇在薄膜中的体积分数的非线性行为。最后，我们利用磁滞现象以0.09 nm/s的高沉积速率沉积了低团簇掺入的a-Si：H薄膜。
Suppressing cluster incorporation into hydrogenated amorphous silicon films deposited by SiH4discharge plasma is the key to better film stability, because cluster incorporation contributes significantly to the formation of SiH2bonds which are closely related to light-induced degradation of the films. Here, we report hysteresis in the deposition rate and the volume fraction of clusters incorporated into a-Si:H films deposited by SiH4plasma CVD; the deposition rate and the volume fraction show looping behaviors when sequentially changing the discharge power, because clusters formed in the previous condition tend to remain in plasma and affect significantly the deposition rate and the volume fraction. The hysteresis is also shown as a function of SiH* emission intensity, being proportional to the radical generation rate due to electron impact dissociation of SiH4. By utilizing the hysteresis phenomenon, the volume fraction of clusters in films can be reduced significantly. We propose a model of plasma containing clusters, in which clusters play a key role in the hysteresis, namely the nonlinear behavior of the deposition rate and the volume fraction of clusters in films. Eventually, we deposited a-Si:H films of low cluster incorporation at a high deposition rate of 0.09 nm/s utilizing the hysteresis phenomena.