Raman gain and optical loss in GaP–AlGaP waveguides
Raman gain and optical loss in GaP–AlGaP waveguides
复制标题
GaP-AlGaP 波导中的拉曼增益和光学损耗
DOI：
10.1063/1.372357
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发表时间：
2000
影响因子：
3.2
通讯作者：
J. Nishizawa
中科院分区：
文献类型：
--
作者：
T. Saito;K. Suto;T. Kimura;A. Watanabe;J. Nishizawa
测量了GaP/AlGaP半导体喇曼放大器在双光路和单光路结构下的受激拉曼增益系数和光损耗。对于双程结构，在连续波抽运下，截面面积为4μm2的波导的每波导长的最大增益为3.27db/cm。结果表明，长度为10 mm的长波导的增益最高，为2.57分贝。对于单路径结构，分别测量了后向散射和前向散射的增益，发现后向散射的增益占主导地位。由这些结果估算出后向增益系数为12.3×10−8W cm−1，约为已知具有最大拉曼散射增益的CS2和LiNbO_3的5倍。然而，波导的光学损耗是通过精细测量来估计的。最低的单向损耗对应于α的有效吸收系数Ef=0.28 cm−1。
The stimulated Raman gain coefficient and the optical loss in GaP/AlGaP semiconductor Raman amplifiers are measured for both double path and single path structures. For the double path structure, the highest gain per waveguide length is 3.27 dB/cm for a waveguide with a cross-sectional area of 4 μm2, under continuous wave pumping. A long waveguide with a length of 10 mm is demonstrated to have the highest gain of 2.57 dB. For a single path structure, the gains of backward scattering and forward scattering are separately measured and it is found that the gain of backward scattering is dominant. From these results, the backward gain coefficient is estimated to be 12.3×10−8 W cm−1. This value is about five times that of CS2 and LiNbO3, which is known to have the highest Raman scattering gain. However, the optical losses of the waveguides are estimated from the finesse measurement. The lowest one way loss corresponds to an effective absorption coefficient of αeff=0.28 cm−1.