Origin of the symmetric dimers in the Si(100) surface
Origin of the symmetric dimers in the Si(100) surface
复制标题
Si(100) 表面对称二聚体的起源
DOI：
10.1103/physrevb.55.15448
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发表时间：
1997
影响因子：
3.7
通讯作者：
S. Ozawa
中科院分区：
文献类型：
--
作者：
H. Shigekawa;K. Hata;K. Miyake;M. Ishida;S. Ozawa
在室温下，在Si（100）表面的对称二聚体区存在并迁移了一个由二聚体行相边界组成的相缺陷。当相缺陷相对于扫描隧道显微镜（STM）的时间尺度快速迁移时，会产生对称的二聚体图像。在这种情况下，由于二聚体触发器运动被限制在二聚体行的区域边界，大部分表面保持不变，而不会破坏沿二聚体行弯曲二聚体的2x反相关。考虑到所得到的结果，以及在室温下光谱学得到的具有不对称二聚体结构的表面的电子结构与理论计算结果吻合较好，认为室温下观察到的对称二聚体结构是由相缺陷的特征性质引起的。
A phase defect consisting of a phase boundary in a dimer row was observed to exist and migrate in the symmetric dimer region of a Si(100) surface at about room temperature. When the phase defects migrate rapidly compared to the timescale of scanning tunneling microscopy (STM), it results in a symmetric image of dimers. In this case, since dimer flip-flop motion is limited to the domain boundaries of the dimer rows, most of the surface remains unchanged without the destruction of the 2x anticorrelation of the buckled dimers along the dimer rows. Considering the obtained results and the fact that the electronic structures obtained by photoemission spectroscopy at room temperature agree well with the theoretical results calculated for a surface with asymmetric dimer structures, the symmetric dimer structure observed at room temperature is concluded to be caused by the characteristic properties of the phase defects.