Interfacial energy calculation at interconnect-metal/barrier-metal interfaces for grain orientation control
Interfacial energy calculation at interconnect-metal/barrier-metal interfaces for grain orientation control
复制标题
用于晶粒取向控制的互连金属/势垒金属界面处的界面能量计算
DOI：
10.1063/1.358773
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发表时间：
1995
期刊：
影响因子：
--
通讯作者：
Hitoshi Itow
中科院分区：
文献类型：
--
作者：
Y. Nakasaki;G. Minamihaba;K. Suguro;Hitoshi Itow
在刚性晶格近似下，假定简单的加性相互作用势，数值研究了超大规模积分中互连金属/势垒金属界面的界面能。计算得到了一些值得注意的结果：Al更倾向于TiN(111)面上的(111)取向，而铜则没有那么强的择优取向。可以预期，Al(111)在VNX(111)上表现出强劲的外延生长，铜在Nb(110)上也是如此。在计算的基础上，用直流磁控溅射法连续溅射了一种Cu/Nb双层结构，并用X射线衍射仪分析了其晶体取向。铜表现出强烈的(111)择优取向，且在(111)摇摆角附近沿衬底法线方向有较窄的半宽。
The interfacial energy of interconnect‐metal/barrier‐metal interfaces in ultralarge‐scale integrations have been investigated numerically by assuming a simple additive interaction potential within a rigid‐lattice approximation. The calculation gave some noteworthy results: Al prefers the (111) orientation on a TiN(111) plane, but Cu did not have such a strong preference. Al(111) can be expected to show strong epitaxial growth on VNx(111), as did Cu on Nb(110). On the basis of the calculations, a Cu/Nb bilayered structure was sputter deposited sequentially by dc magnetron sputtering and examined for crystalline orientation by x‐ray‐diffraction analysis. Cu exhibited strong (111) orientation preference, and a narrow full width at half‐maximum in (111) rocking angle around the substrate normal.