EXPERIMENTAL CONFIRMATION OF A NEW SEMICONDUCTOR DETECTOR PRINCIPLE
EXPERIMENTAL CONFIRMATION OF A NEW SEMICONDUCTOR DETECTOR PRINCIPLE
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DOI：
10.1016/0168-9002(90)90470-q
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发表时间：
1990-03-01
影响因子：
1.4
通讯作者：
ZIEMANN, T
中科院分区：
文献类型：
--
作者：
KEMMER, J;LUTZ, G;ZIEMANN, T
Kemmer和Lutz于1986年提出的一种新的探测器放大原理已得到实验验证。该器件的突出特点是内置放大、信号电荷存储能力和重复非破坏性读出的可能性。该装置被用于探测来自~（241）Am、Am和~（55）Fe源的X射线。在室温下获得了非常低的噪声系数（σ=30个电子，对应于6 keV能量下FWHM = 250 eV的能量分辨率）。该结构可以作为检测器或作为纯电子元件的各种应用。其中最有趣的是作为一个像素检测器与随机访问非破坏性读出的使用。该设备可以在非常低的功率下操作，因为只有阅读（一次一个单个像素）而不是存储消耗功率。该设备的其他选项是在读出期间快速清除、选通和改变像素大小。与更标准的二维设备（例如CCD检测器）相比，后一个属性可以用于大幅增加读出速度，因为可以将高密度读出限制到通过整个检测器的粗略扫描预先确定的感兴趣区域。该器件的另一种用途是作为模拟或数字存储器，或者作为具有大幅降低的寄生电容的简单晶体管。可能的进一步发展是与新颖的三维模拟存储装置的组合，该三维模拟存储装置可以用作具有若干电荷图像的内置存储的检测器或用作三维模拟存储器。
A new detector-amplification principle proposed by Kemmer and Lutz in 1986 has been experimentally verified. Outstanding features of this device are the built-in amplification, the signal charge storage capability and the possibility of repeated non-destructive readout. The device was used for detection of X-rays from a241Am and from Am and from an55Fe source. Very low noise figures (σ=30 electrons corresponding to an energy resolution of FWHM = 250 eV at 6 keV energy) have been obtained at room temperature. Various applications of the structure either as detector or as purely electronic element are possible. One of the most intriguing is the use as a pixel detector with random access non-destructive readout. This device may be operated at very low power, as only reading (of one single pixel at a time), not storing, consumes power. Further options of the device are fast clearing, gating and variation of the pixel size during readout. The latter property can be used to drastically increase the readout speed compared to more standard two dimensional devices as e.g. CCD detectors, as one may restrict the high density readout to regions of interest determined beforehand by a coarse scan of the whole detector. An alternative use of the device is as an analog or digital memory, or as a simple transistor with drastically reduced parasitic capacitances. Possible further developments are the combination with a novel three dimensional analog storage device which may either be used as a detector with built-in storage of several charge images or as a three dimensional analog memory.