Resist residues and transistor gate fabrication
Resist residues and transistor gate fabrication
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抗蚀剂残留物和晶体管栅极制造
DOI：
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发表时间：
2009
期刊：
影响因子：
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通讯作者：
I. Thayne
中科院分区：
文献类型：
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作者：
D. Macintyre;O. Ignatova;S. Thoms;I. Thayne
在这篇文章中，作者研究了抗蚀剂残留物的形成和去除，主要目的是提高晶体管栅极制造的可靠性。器件性能在很大程度上取决于金属接触的质量以及栅极金属和衬底之间的界面。随着晶体管尺寸的缩小，可靠的晶体管制造变得越来越困难。如果需要湿法或干法蚀刻步骤来进行栅极凹陷，则残余抗蚀剂层可能变得显著，用于高电子迁移率晶体管或III-V金属氧化物半导体场效应晶体管制造中薄氧化物层的去除。他们观察到聚甲基丙烯酸甲酯（PMMA）中的两种残留抗蚀剂层：曝光的和未曝光的。许多小组在PMMA的电子束暴露和显影区域观察到暴露残留物。在这篇文章中，他们表明，观察到的粒度位于一个连续的残留膜的顶部，并考虑这种影响的栅极制造。他们...
In this article, the authors investigate the formation and removal of resist residues with the main objective to improve the reliability of transistor gate fabrication. Device performance is strongly dependent on the quality of metal contacts and the interface between gate metal and substrates. Reliable transistor fabrication becomes increasingly difficult as transistor dimensions shrink. Residual resist layers can become significant if wet or dry etching steps are required for gate recessing, e.g., for high electron mobility transistors or the removal of thin oxide layers in III-V metal oxide semiconductor field effect transistor fabrication. They observe two sorts of residual resist layers in polymethyl methacrylate (PMMA): exposed and nonexposed. Exposed residuals have been observed by many groups in electron beam exposed and developed regions of PMMA. In this article, they show that the observed granularity lies on top of a continuous residual film and consider this effect on gate fabrication. They al...