Electrically driven green, olivine, and amber color nanopyramid light emitting diodes.
Electrically driven green, olivine, and amber color nanopyramid light emitting diodes.
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DOI：
10.1364/oe.21.023030
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发表时间：
2013-10
期刊：
影响因子：
3.8
通讯作者：
Shih-Pang Chang;Jet-Rung Chang;Kuok-Pan Sou;Mei-Chun Liu;Yuh-Jen Cheng;H. Kuo;Chun-Yen Chang
中科院分区：
文献类型：
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作者：
Shih-Pang Chang;Jet-Rung Chang;Kuok-Pan Sou;Mei-Chun Liu;Yuh-Jen Cheng;H. Kuo;Chun-Yen Chang
我们报告了电驱动绿色、橄榄石色和琥珀色纳米金字塔 GaN 发光二极管 (LED) 的制造和研究。 InGaN/GaN 多量子阱 (MQW) 生长在纳米金字塔半极性面上。与常用的（0001）c面MQW相比，半极性面具有较低的压电场，从而导致更快的辐射复合效率。这对于高 In 含量 MQW 非常重要。测得的绿色、橄榄石色和琥珀色 LED 的内部量子效率分别为 30%、25% 和 21%。还研究了半极性 MQW 的辐射和非辐射寿命。
We report the fabrication and studies of electrically driven green, olivine, and amber color nanopyramid GaN light emitting diodes (LEDs). InGaN/GaN multiple quantum wells (MQWs) were grown on the nanopyramid semipolar facets. Compared with the commonly used (0001) c-plane MQWs, the semipolar facet has lower piezoelectric field, resulting in much faster radiative recombination efficiency. This is important for high In content MQWs. The measured internal quantum efficiencies for green, olivine, and amber color LED are 30%, 25%, and 21%, respectively. The radiative and non-radiative lifetime of the semipolar MQWs are also investigated.