GaN/AlN quantum-disk nanorod 280 nm deep ultraviolet light emitting diodes by molecular beam epitaxy
GaN/AlN quantum-disk nanorod 280 nm deep ultraviolet light emitting diodes by molecular beam epitaxy
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DOI：
10.1364/ol.45.000121
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发表时间：
2019
期刊：
影响因子：
3.6
通讯作者：
T. Wei;S. Islam;U. Jahn;Jianchang Yan;Kevin Lee;S. Bharadwaj;X. Ji;Junxi Wang;Jinmin Li;V. Protasenko;H. Xing;D. Jena
中科院分区：
文献类型：
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作者：
T. Wei;S. Islam;U. Jahn;Jianchang Yan;Kevin Lee;S. Bharadwaj;X. Ji;Junxi Wang;Jinmin Li;V. Protasenko;H. Xing;D. Jena
我们报道了光学和电泵浦${\sim}{280}\,\,{\rm nm}$ ~ 280nm深紫外（DUV）发光二极管（led），其超薄GaN/AlN量子盘（QDs）通过使用分子束外延选择性外延再生插入AlGaN纳米棒。透射电镜显示，由于应变释放和螺纹位错密度的降低，GaN/AlN QD LED在有序纳米棒上表现出较强的DUV发射分布，内部量子效率高达81.2%。纳米棒组件抑制了光的横向导向模式，光提取效率可以从平面DUV led的14.9%提高到纳米棒DUV led的49.6%。所提出的结果为解决DUV LED器件的外部量子效率限制问题提供了潜力。
We report optically and electrically pumped ${\sim}{280}\,\,{\rm nm}$∼280nm deep ultraviolet (DUV) light emitting diodes (LEDs) with ultra-thin GaN/AlN quantum disks (QDs) inserted into AlGaN nanorods by selective epitaxial regrowth using molecular beam epitaxy. The GaN/AlN QD LED has shown strong DUV emission distribution on the ordered nanorods and high internal quantum efficiency of 81.2%, as a result of strain release and reduced density of threading dislocations revealed by transmission electron microscopy. Nanorod assembly suppresses the lateral guiding mode of light, and light extraction efficiency can be increased from 14.9% for planar DUV LEDs to 49.6% for nanorod DUV LEDs estimated by finite difference time domain simulations. Presented results offer the potential to solve the issue of external quantum efficiency limitation of DUV LED devices.