The effect of a zinc-tin-oxide layer used as an etch-stopper layer on the bias stress stability of solution-processed indium-gallium-zinc-oxide thin-film transistors
The effect of a zinc-tin-oxide layer used as an etch-stopper layer on the bias stress stability of solution-processed indium-gallium-zinc-oxide thin-film transistors
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DOI：
10.1088/0022-3727/47/38/385104
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发表时间：
2014-09-24
影响因子：
3.4
通讯作者：
Kim, Hyun Jae
中科院分区：
文献类型：
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作者：
Kim, Chul Ho;Rim, You Seung;Kim, Hyun Jae
我们研究了采用锌锡氧化物(ZTO)作为刻蚀阻止层的溶液处理的铟镓锌氧化物薄膜晶体管(IGZO TFT)的偏压稳定性。由于上层ZTO层的高化学稳定性，DALZI TFT可以使用低成本的背沟刻蚀结构。DALZI TFT在负偏压(应力时间=1000 S)条件下的阈值电压漂移仅为-1.86V，而未钝化的IGZO TFT在负偏压(应力时间=1000 S)条件下的阈值电压漂移为-19.59V。DALZI TFT优异的偏压应力稳定性不仅归因于多层堆积工艺的致密化效应，还归因于由于上层ZTO层中的低氧空位而对环境气体(例如，氧气和水蒸气)的较低敏感性。
We investigated the bias stress stability of solution-processed indium-gallium-zinc-oxide thin-film transistors (IGZO TFTs) using zinc-tin-oxide (ZTO) as the etch-stopper layer, the so-called dual-active-layered ZTO/IGZO TFT (DALZI TFT). The DALZI TFT can use a low-cost back-channel-etch structure because of the high chemical stability of the upper ZTO layer. The DALZI TFT exhibited only a threshold voltage shift of -1.86V under negative bias illumination stress (NBIS) conditions (stress time = 1000 s), while the unpassivated IGZO TFT suffered from a threshold voltage shift of -19.59V under NBIS conditions (stress time = 1000 s). The superior bias stress stability of the DALZI TFT is attributed not only to the densification effect by the multi-stacking process but also to the lower sensitivity to ambient gases (e.g., oxygen and water vapour) due to the low oxygen vacancy in the upper ZTO layer.