The effect of phosphorus diffusion gettering on recombination at grain boundaries in HPMC-silicon wafers
The effect of phosphorus diffusion gettering on recombination at grain boundaries in HPMC-silicon wafers
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磷扩散吸杂对 HPMC 硅片晶界复合的影响
DOI：
10.1016/j.egypro.2016.07.098
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
R. Søndenå
中科院分区：
文献类型：
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作者：
M. S. Wiig;K. Adamczyk;H. Haug;K. Ekstrøm;R. Søndenå
本文研究了磷扩散吸杂对工业铸造高性能多晶硅块晶界复合的影响。从四个不同高度的晶圆已经研究了高分辨率的光致发光成像。从垂直于感兴趣的晶粒边界的线扫描研究了在晶粒边界处的复合。吸杂后晶界复合活性的变化与电子背散射衍射测量的晶粒取向相关，并根据布兰登准则进行分类。吸杂后载流子寿命的相对变化取决于铸件中的高度，并且对注入水平非常敏感。铁浓度也发现从光致发光成像的铁在Fei和FeB状态，分别。吸杂后，铸锭中部的晶界复合活跃。Fei已被有效去除，不再构成任何高度的主要复合路径。
The influence of phosphorus diffusion gettering on recombination at grain boundaries has been studied in a commercially cast high performance multicrystalline silicon block. Wafers from four different heights have been studied with high resolution photoluminescence-imaging. The recombination at grain boundaries was studied from linescans perpendicular to the grain bounadary of interest. The change in recombination activity at grain boundaries after gettering has been correlated with grain orientation measured by electron backscatter diffraction and classified according to Brandon criterion. The relative change in carrier lifetime after gettering depends on the height in the cast, and is very sensitive to the injection level. Iron concentrations were also found from photoluminescence-imaging of iron in Feiand FeB states, respectively. After gettering recombination grain boundaries in the middle section of the ingot has become strongly recombination active. Fei, has been efficiently removed and no longer constitute the main recombination path at any height.