Highly Reflective and Low Resistance Indium Tin Oxide/Ag Ohmic Contacts to p-Type GaN for Flip-Chip Light Emitting Diodes
Highly Reflective and Low Resistance Indium Tin Oxide/Ag Ohmic Contacts to p-Type GaN for Flip-Chip Light Emitting Diodes
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DOI：
10.1149/1.2056467
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发表时间：
2005-11
影响因子：
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通讯作者：
Woong-Ki Hong;June O. Song;H. Hong;K. Ban;Takhee Lee;J. Kwak;Y. Park;T. Seong
中科院分区：
文献类型：
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作者：
Woong-Ki Hong;June O. Song;H. Hong;K. Ban;Takhee Lee;J. Kwak;Y. Park;T. Seong
用于倒装芯片发光二极管的p型GaN的高反射和低电阻氧化铟锡/Ag欧姆接触Woong-Ki Hong，* June-O Song，Hyun-Gi Hong，Keun-Yong Ban，Takhee Lee，J. S. Kwak，Y.南非Park和Tae-Yeon Seong光州科技学院材料科学与工程系，光州500-712，格鲁吉亚理工学院韩国电气与计算机工程学院，亚特兰大，格鲁吉亚30332-0250，美国顺天国立大学材料科学与冶金工程系，Chonnam 540-742，韩国三星高等技术研究所，光子学实验室，韩国水原440-600
Highly Reflective and Low Resistance Indium Tin Oxide/Ag Ohmic Contacts to p-Type GaN for Flip-Chip Light Emitting Diodes Woong-Ki Hong,* June-O Song, Hyun-Gi Hong, Keun-Yong Ban, Takhee Lee, J. S. Kwak, Y. Park, and Tae-Yeon Seong Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea School of Electric and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0250, USA Department of Materials Science and Metallurgical Engineering, Sunchon National University, Chonnam 540-742, Korea Samsung Advanced Institute of Technology, Photonics Laboratory, Suwon 440-600, Korea