Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films
Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films
复制标题
刃位错和 Si 杂质在连接 n 型 GaN 薄膜中蓝色发光和黄色发光中的作用
DOI：
10.1063/1.3187540
复制
发表时间：
2009-07-27
影响因子：
4
通讯作者：
Yang, Hui
中科院分区：
文献类型：
--
作者：
Zhao, D. G.;Jiang, D. S.;Yang, Hui
发现在没有有意的受主掺杂的情况下生长的n型GaN薄膜中的蓝色和黄色发光带之间存在密切的关系。X射线衍射的（102）半峰全宽表明，随着位错密度的增加，蓝色发光与黄色发光的强度比（IBL/IYL）减小。此外，IBL/IYL比随着Si掺杂的增加而减小。指出刃位错和硅杂质在连接蓝、黄发光中起重要作用。
A close relationship is found between the blue and yellow luminescence bands in n-type GaN films, which are grown without intentional acceptor doping. The intensity ratio of blue luminescence to yellow luminescence (IBL/IYL) decreases with the increase in edge dislocation densities as demonstrated by the (102) full width at half maximum of x-ray diffraction. In addition, the IBL/IYL ratio decreases with the increase in Si doping. It is suggested that the edge dislocation and Si impurity play important roles in linking the blue and yellow luminescence.