Highly Efficient Solid-State Near-Infrared Emitting Material Based on Triphenylamine and Diphenylfumaronitrile with an EQE of 2.58% in Nondoped Organic Light-Emitting Diode

Highly Efficient Solid-State Near-Infrared Emitting Material Based on Triphenylamine and Diphenylfumaronitrile with an EQE of 2.58% in Nondoped Organic Light-Emitting Diode
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高%20效率%20固态%20近红外%20发射%20材料%20Based%20on%20三苯胺%20和%20二苯基富马腈%20with%20an%20EQE%20of%202.58%%20in%20Nonded%20Organic%20Light-Emitting%20二极管

DOI:
10.1002/adfm.201503344
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发表时间:
2015-12-22
影响因子:
19
通讯作者:
Yang, Bing
Yang, Bing
中科院分区:
材料科学1区
文献类型:
--
作者:
Han, Xiao;Bai, Qing;Yang, Bing

文献摘要

被引文献

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开发高效的近红外(NIR)发射材料是当前的焦点。施主-受主(D-A)结构是获得窄能隙的有效策略。本文合成了一种D-A型近红外荧光化合物2,3-双(4-(二苯基氨基)-[1,1-联苯]-4-基)邻苯二甲腈(TPATCN),并对其进行了表征。理论计算和电子物理实验表明,TPATCN发挥了电荷转移态具有较大的偶极矩和局域激发态具有一定轨道重叠度的优点.在D-A体系中,可能出现高度混合或混合的局域和电荷转移激发态,以同时实现大部分单重态形成和高量子效率。TPATCN具有很强的近红外荧光,相应的薄膜量子效率为33%,晶体效率为72%。值得注意的是,未掺杂的NIR有机发光二极管(OLED)的外量子效率达到2.58%,并且在100-300 mA cm(-2)的范围内保持相当恒定,这是迄今为止报道的NIR OLED的最好结果之一。
The development of efficient near-infrared (NIR) emitting material is of current focus. Donor-acceptor (D-A) architecture has been proved to be an effective strategy to obtain narrow energy gap. Herein, a D-A-type NIR fluorescent compound 2,3-bis(4-(diphenylamino)-[1,1-biphenyl]-4-yl)fumaronitrile (TPATCN) is synthesized and fully characterized. As revealed by theoretical calculations and photophysical experiments, TPATCN exerts the advantages of the relatively large dipole moment of the charge transfer state and a certain degree of orbital overlap of the local excited state. A highly mixed or hybrid local and charge transfer excited state might occur to simultaneously achieve both a large fraction of singlet formation and a high quantum efficiency in D-A system. TPATCN exhibits strong NIR fluorescence with the corresponding thin film quantum efficiency of 33% and the crystal efficiency of 72%. Remarkably, the external quantum efficiency of nondoped NIR organic light-emitting diode (OLED) reaches 2.58% and remains fairly constant over a range of 100-300 mA cm(-2), which is among the best results for NIR OLEDs reported so far.