Deposition of HfO2, Gd2O3 and PrOx by Liquid Injection ALD Techniques†
Deposition of HfO2, Gd2O3 and PrOx by Liquid Injection ALD Techniques†
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通过液体注射 ALD 技术沉积 HfO2、Gd2O3 和 PrOx†
DOI：
10.1002/cvde.200406348
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发表时间：
2005
影响因子：
--
通讯作者：
M. Schumacher
中科院分区：
文献类型：
--
作者：
R. Potter;P. Chalker;T. Manning;H. C. Aspinall;Y. F. Loo;A. C. Jones;L. Smith;G. Critchlow;M. Schumacher
采用液体注入原子层沉积（ALD）方法制备了氧化铪（HfO 2）、氧化钆（Gd 2 O3）和氧化镨（PrOx）薄膜，并与采用相同反应器的热金属有机物（MO）CVD方法制备的薄膜进行了比较。ALD生长的膜在衬底温度范围（150-450 °C）内使用[Hf（mmp）4 ]、[Gd（rump）3 ]或[Pr（mnip）3 ]（mmp = OCMe 2CH 2 OMe）和水蒸气的交替脉冲沉积在Si（100）上。X射线衍射（XRD）分析表明，HIO 2薄膜为非晶态，经800 °C空气退火后，薄膜晶化为单斜相。XRD分析表明，生长的Gd 2 O3和PrOx薄膜具有一定的结晶度。残余碳（0.8-3.3 at.-%）通过俄歇电子能谱（AF-S）分析，在HfO 2和PrO2薄膜中检测到了Al 2 O3.而在Gd 2 O3薄膜中则没有。在225 °C下通过改变在每个ALD循环期间注入的前体的体积来研究前体的自限制行为，并且在每种情况下，氧化物生长不是完全自限制的。我们提出了一个机制，这涉及的mmp基团的β-氢化物消除，也提出了一些一般的机械原理，可能会影响ALD使用其他前体的氧化物的生长。
Thin films of hafnium oxide (HfO 2 ), gadolinium oxide (Gd 2 O 3 ), and praseodymium oxide (PrO x ) have been deposited by liquid injection atomic layer deposition (ALD) and for comparison, have also been deposited by thermal metal-organic (MO) CVD using the same reactor. The ALD-grown films were deposited on Si(100) over a range of substrate temperatures (150-450 °C) using alternate pulses of [Hf(mmp) 4 ], [Gd(rump) 3 ], or [Pr(mnip) 3 ] (mmp = OCMe 2 CH 2 OMe) and water vapor. X-ray> diffraction (XRD) analysis showed that as-grown films of HiO 2 were amorphous hut these crystallized into the monoclinic phase after annealing in air at 800 °C. XRD analysis showed that as-grown Gd 2 O 3 and PrO x films had some degree of crystallinity. Residual carbon (0.8-3.3 at.-%) was detected in the HfO 2 and PrO, films by Auger electron spectroscopy (AF-S). but not in the Gd 2 O 3 films. The self-limiting behavior of the precursors was investigated at 225 °C by varying the volume of precursor injected during each ALD cycle and, in each case, oxide growth was not fully self-limiting. We propose a mechanism for this involving β-hydride elimination of the mmp group, and also propose some general mechanistic principles which may influence the growth of oxides by ALD using other precursors.