Fermi-Level Pinning at Metal/High-$k$ Interface Influenced by Electron State Density of Metal Gate
Fermi-Level Pinning at Metal/High-$k$ Interface Influenced by Electron State Density of Metal Gate
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DOI：
10.1109/led.2010.2062171
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发表时间：
2010-09
影响因子：
4.9
通讯作者：
Z. C. Yang;A. Huang;X. Zheng;Z. Xiao;X. Y. Liu;X. Zhang;P. Chu;W. Wang
中科院分区：
文献类型：
--
作者：
Z. C. Yang;A. Huang;X. Zheng;Z. Xiao;X. Y. Liu;X. Zhang;P. Chu;W. Wang
研究了金属/高 k 界面处的费米能级钉扎 (FLP) 及其对金属栅极电子态密度的依赖性。研究发现，FLP很大程度上是由金属真空能级的畸变决定的，而真空能级的畸变又是由金属的电子态密度定量决定的。金属真空能级畸变的物理起源归因于金属中界面电荷的镜像电荷。这些结果表明金属/高k堆叠的有效功函数也受金属的电子态密度的控制。
The Fermi-level pinning (FLP) at the metal/high-k interface and its dependence on the electron state density of the metal gate are investigated. It is found that the FLP is largely determined by the distortion of the vacuum level of the metal which is quantitatively ruled by the electron state density of the metal. The physical origin of the vacuum level distortion of the metal is attributed to an image charge of the interface charge in the metal. Such results indicate that the effective work function of the metal/high-k stack is also governed by the electron state density of the metal.