Wideband electronically tunable microwave bandstop filters using iron film-gallium arsenide waveguide structure
Wideband electronically tunable microwave bandstop filters using iron film-gallium arsenide waveguide structure
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DOI：
10.1109/20.801120
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发表时间：
1999-09
影响因子：
2.1
通讯作者：
C. S. Tsai;Jun Su;Chin C. Lee
中科院分区：
文献类型：
--
作者：
C. S. Tsai;Jun Su;Chin C. Lee
利用铁氧体薄膜-砷化镓（FeGaAs）材料结构实现了一种宽带电调谐微波带阻（陷波）滤波器。已经实现了传播微波的峰值吸收载波频率的调谐范围为8至27 GHz。
A wideband electronically tunable microwave bandstop (notch) filter has been realized using ultrathin iron film-gallium arsenide (FeGaAs) material structure. A tuning range as large as 8 to 27 GHz for the peak absorption carrier frequency of a propagating microwave has been accomplished.