Subthreshold Schottky-barrier thin-film transistors with ultralow power and high intrinsic gain
Subthreshold Schottky-barrier thin-film transistors with ultralow power and high intrinsic gain
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DOI：
10.1126/science.aah5035
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发表时间：
2016-10-21
期刊：
影响因子：
56.9
通讯作者：
Nathan, Arokia
中科院分区：
文献类型：
--
作者：
Lee, Sungsik;Nathan, Arokia
在与物联网可穿戴设备相关的新兴应用领域中，对低功耗的追求变得非常引人注目。在这里，我们报告了一种肖特基势垒氧化铟镓锌薄膜晶体管，该晶体管在低电源电压下工作在深亚阈值状态（即接近关闭状态）（
The quest for low power becomes highly compelling in newly emerging application areas related to wearable devices in the Internet of Things. Here, we report on a Schottky-barrier indium-gallium-zinc-oxide thin-film transistor operating in the deep subthreshold regime (i.e., near the OFF state) at low supply voltages (